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Volumn 278, Issue 1-4, 2005, Pages 61-66

Defect-free 50-layer strain-balanced InAs quantum dots grown on InAlGaAs/InP for infrared photodetector applications

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

DEFECTS; INFRARED RADIATION; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTODETECTORS; SEMICONDUCTOR QUANTUM DOTS; STRAIN;

BANDGAP SEMICONDUCTORS; OPTICAL SPECTRUM; SEMICONDUCTING III-V MATERIALS; STACKING;

INDIUM COMPOUNDS;

EID: 18444392108 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.052 Document Type: Conference Paper

Times cited : (8)

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