Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on InP(0 0 1)

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 82-83

  Fossard, F ^a   Helman, A ^a   Julien, F H ^a   Gendry, M ^b   Brault, J ^b   Peronne E ^c   Alexandrou, A ^c   Schacham, S E ^d   Finkman, E ^e  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b ECOLE CENTRALE DE LYON   (France)

^c LABORATOIRE D OPTIQUE APPLIQUÉE   (France)

^d ARIEL UNIVERSITY   (Israel)

^e TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

III V semiconductors; Intraband transitions; Quantum dots; Quantum wires

Indexed keywords

MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

INTRABAND SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0037395168     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00779-8     Document Type: Conference Paper

References (3)

1. Fossard F.et al. Infrared Phys. Technol. 42:2001;443.
2. Sauvage S.et al. J. Appl. Phys. 82:1997;3396.
3. Weber A.et al. Appl. Phys. Lett. 74:1999;413.