Efficient molecular dynamics scheme for predicting dopant implant profiles in semiconductors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 153, Issue 1-4, 1999, Pages 391-397

  Beardmore, Keith M ^a   Grønbech Jensen, Niels ^b  

^a MOTOROLA INC   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPOSITION; COMPUTER SIMULATION; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ATOMIC INTERACTIONS; BINARY COLLISION APPROXIMATION; DOPANT IMPLANTATION; ELECTRONIC STOPPING; IMPLANT PROFILES; INELASTIC ENERGY LOSS;

MOLECULAR DYNAMICS;

EID: 0033516058     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00203-7     Document Type: Article

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