Plasma sputtering of silicon dioxide substrate by low energy Ar ion bombardment: Molecular dynamics simulation

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 I, 2002, Pages 217-222

  Kim, Dong Ho ^a   Lee, Seung Yup ^a   Kim, Do Hyun ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

A1. Computer simulation; A1. Etching; A1. Surface processes; B1. Oxide

Indexed keywords

COMPUTER SIMULATION; ETCHING; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR DYNAMICS; PLASMAS; POTENTIAL ENERGY; SPUTTERING; SUBSTRATES;

PLASMA SPUTTERING; POTENTIAL ENERGY FUNCTIONS (PEF);

SILICA;

EID: 0036531437     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01905-4     Document Type: Conference Paper

References (24)