Kink defects and Fermi level pinning on (2×4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and x-ray photoelectron spectroscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1163-1172

  Ishikawa, Yasuhiko ^a   Fukui, Takashi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000105053     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589433     Document Type: Article

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