Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 2266-2274

  Sato, Taketomo ^a   Tamai, Isao ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL GROWTH; FUNCTIONS; GROWTH KINETICS; LITHOGRAPHY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

DIFFUSION CONSTANT; QUANTUM WIRE TRANSISTORS; WET ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 4944223415     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1773841     Document Type: Conference Paper

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