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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2652-2656

Cross-sectional evolution and its mechanism during selective molecular beam epitaxy growth of GaAs quantum wires on (111)B substrates

(3) Tamai, Isao a Sato, Taketomo a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

(111)B patterned substrates; AlGaAs; GaAs; Growth mechanism; Molecular beam epitaxy (MBE); Selective growth

Indexed keywords

ALUMINUM COMPOUNDS; COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

(111)B-PATTERENED SUBSTRATES; ALGAAS; GAAS; GROWTH MECHANISM; SELECTIVE GROWTH;

QUANTUM ELECTRONICS;

EID: 21244474356 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2652 Document Type: Conference Paper

Times cited : (7)

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