Nickel-silicide process for ultra-thin-body SOI-MOSFETs

Microelectronic Engineering

Volumn 82, Issue 3-4 SPEC. ISS., 2005, Pages 497-502

  Schmidt, M ^a   Mollenhauer, T ^a   Gottlob, H D B ^a   Wahlbrink, T ^a   Efavi, J K ^a   Ottaviano, L ^b,c   Cristoloveanu, S ^c   Lemme, M C ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

^b CNR IMM   (Italy)

^c IMEP LAHC   (France)

Author keywords

Nickel silicide; Salicide; SOI MOSFET; Ultra Thin Body (UTB)

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; MOSFET DEVICES; RAPID THERMAL ANNEALING; SILICON ON INSULATOR TECHNOLOGY; SPUTTER DEPOSITION;

NICKEL SILICIDES; SALICIDES; SOI-MOSFET; ULTRA-THIN BODY;

NICKEL COMPOUNDS;

EID: 28044464019     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.07.049     Document Type: Conference Paper

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