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Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 567-574

Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors

(3) Da Silva Jr , E F a De Vasconcelos, E A a Freire, V N b

a FEDERAL UNIVERSITY OF PERNAMBUCO (Brazil)

b FEDERAL UNIVERSITY OF CEARÁ (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; HETEROJUNCTIONS; INTERFACES (MATERIALS); PASSIVATION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SILICA;

DOPANT PASSIVATION; TIME DEPENDENT;

MOS CAPACITORS;

EID: 0033703040 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(99)00520-1 Document Type: Article

Times cited : (8)

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