Effects of gamma-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 81, Issue 10, 1998, Pages 37-47

  Yoshikawa, Masahito ^a,e,f,g   Ohshima, Takeshi ^a,g,h   Itoh, Hisayoshi ^a   Nashiyama, Isamu ^a   Takahashi, Yoshihiro ^b   Ohnishi, Kazunori ^b   Okumura, Hajime ^c   Yoshida, Sadafumi ^d  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NIHON UNIVERSITY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d SAITAMA UNIVERSITY   (Japan)

^e CHIBA INSTITUTE OF TECHNOLOGY   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^g JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^h UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

6H SiC; Gamma ray; Interface trap; MOS; Oxide trapped charge; Silicon carbide

Indexed keywords

ELECTRON TRAPS; GAMMA RAYS; INTERFACES (MATERIALS); MOS DEVICES; OXIDES; RADIATION EFFECTS; SILICON CARBIDE;

HEXAGONAL SILICON CARBIDE; INTERFACE TRAP;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032184209     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1520-6432(199810)81:10<37::aid-ecjb5>3.0.co;2-h     Document Type: Article

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