Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes

Journal of Crystal Growth

Volumn 285, Issue 4, 2005, Pages 450-458

  Tinjod, F ^a,c   De Mierry, P ^a   Lancefield, D ^a,d   Bougrioua, Z ^a   Laugt S ^a   Tottereau, O ^a   Lorenzini, P ^a   Chenot, S ^a   Virey, E ^b   Kokta, M R ^b   Stone Sundberg, J L ^b   Pauwels, D ^c  

^a CNRS   (France)

^b Saint Gobain Crystals and Detectors   (United States)

^c SAINT GOBAIN RECHERCHE   (France)

^d UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

A3. Heteroepitaxy; B1. GaN; B3. Electroluminescence; B3. Light emitting diode

Indexed keywords

CRYSTAL LATTICES; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

ALUMINA-RICH SPINELS; SPINELS; SUBSTRATE MATERIALS;

ALUMINA;

EID: 28044455664     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.08.059     Document Type: Article

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