Integration of SiOC air gaps in copper interconnects

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 274-279

  Gosset, L G ^a   Arnal, V ^b   Brun, Ph ^c   Broekaart, M ^a   Monget, C ^b   Casanova, N ^b   Rivoire, M ^b   Oberlin, J C ^b   Torres, J ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

Air gap; Copper interconnect; Dual damascene architecture; PECVD dielectrics; Ultra low K

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRIC CONTACTS; SILICON COMPOUNDS;

COPPER INTERCONNECTS;

DIELECTRIC MATERIALS;

EID: 0142011576     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00438-6     Document Type: Conference Paper

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