Epitaxial growth and characterisation of phosphorus doped SiC using TBP as precursor

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 101-104

  Henry, Anne ^a   Janzén, Erik ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

CVD; Phosphorus; Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPILAYERS; PHOSPHORUS; PHOTOLUMINESCENCE; SILICON CARBIDE; THERMODYNAMIC PROPERTIES;

GROWTH PARAMETERS; SIC EPILAYER; TBP; THERMODYNAMICAL CALCULATIONS;

EPITAXIAL GROWTH;

EID: 27844479346     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.101     Document Type: Conference Paper

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