Phosphorus four particle donor bound exciton complex in 6H SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 465-468

  Sridhara, S G ^a   Clemen, L L ^a   Nizhner, D G ^a   Devaty, R P ^a   Choyke, W J ^a   Larkin, D J ^b  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Bound Exciton; Phosphorus; Spin Orbit Splitting; Valley Orbit Splitting

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

FOUR PARTICLE BOUND EXCITON COMPLEX; SPIN ORBIT SPLITTING; VALLEY ORBIT SPLITTING;

SILICON CARBIDE;

EID: 0031675764     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.465     Document Type: Article

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