Microstructural, ferroelectric, and dielectric properties of Bi 3.15 Nd 0.85Ti 3O 12 ceramics

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Qi, Y J ^a   Xiao, X ^a   Lu, C J ^a   Mao, X Y ^b   Chen, X B ^b  

^a HUBEI UNIVERSITY   (China)

^b YANGZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BNDT CERAMICS; HYSTERESIS LOOPS; PEROVSKITE STRUCTURES; SOLID STATE REACTIONS;

BISMUTH COMPOUNDS; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; FERROELECTRICITY; HYSTERESIS; LEAKAGE CURRENTS; MICROSTRUCTURE; REACTION KINETICS;

FERROELECTRIC CERAMICS;

EID: 27844475317     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2103418     Document Type: Article

References (27)

1. C. A. Araujo, J. D. Cuhair, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
2. S. E. Cummins and L. E. Cross, J. Appl. Phys. 39, 2268 (1968).
3. P. C. Joshi and S. B. Krupanidhi, Appl. Phys. Lett. 62, 1928 (1993).
4. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature (London) 401, 682 (1999).
5. H. N. Lee, D. Hesse, N. Zakharov, S. K. Lee, and U. Gösele, Science 296, 2006 (2002).
6. A D. Rae, J. G. Thompson, and R. L. Withers, Acta Crystallogr., Sect. B: Struct. Sci. B48, 418 (1992).
7. Y. Noguchi, M. Miyayama, and T. Kudo, Phys. Rev. B 63, 214102 (2001).
8. U. Chon, H. M. Jang, M. G. Kim, and C. H. Chang, Phys. Rev. Lett. 89, 087601 (2002).
9. A. Garg, Z. H. Barber, M. Dawber, J. F. Scott, A. Snedden, and P. Lightfoot, Appl. Phys. Lett. 83, 2414 (2003).
10. S. T. Zhang, X. J. Zhang, H. W. Cheng, Y. F. Chen, Z. G. Liu, N. B. Ming, X. B. Hu, and J. Y. Wang, Appl. Phys. Lett. 83, 4378 (2003).
11. J. H. Li, Y. Qiao, X. L. Liu, C. J. Nie, C. J. Lu, Z. X. Xu, S. M. Wang, N. X. Zhang, D. Xie, H. C. Yu, and J. Q. Li, Appl. Phys. Lett. 85, 3193 (2004).
12. J. F. Dorrian, R. E. Newnham, and D. K. Smith, Ferroelectrics, 3, 17 (1971).
13. H. McMurdie, M. Morris, E. Evans, B. Paretzkin, W. Wong-Ng, and C. Hubbard, Powder Diffr. 1, 84 (1986).
14. Č. Jovalekić, M. Pavlović, P. Osmokrović, and Lj. Atanasoska, Appl. Phys. Lett. 72, 1051 (1998).
15. Y. Nouguchi and M. Miyayama, Appl. Phys. Lett. 78, 1903 (2001).
16. S. B. Ren, C. J. Lu, J. S. Liu, H. M. Shen, and Y. N. Wang, Phys. Rev. B 54, R14337 (1996).
17. S. B. Ren, C. J. Lu, H. M. Shen, and Y. N. Wang, Phys. Rev. B 55, 3485 (1997).
18. D. Wu, A. D. Li, and N. B. Ming, J. Appl. Phys. 95, 4275 (2004).
19. A. Chen, Y. Zhi, and J. Zhi, Phys. Rev. B 61, 957 (2000).
20. A. Chen, Y. Zhi, P. Lunkhemer, and A. Loidl, Phys. Rev. B 59, 6670 (1999).
21. Y. Wu, M. J. Forbess, S. Seraji, S. J. Limmer, T. P. Chou, and G. Z. Cao, J. Appl. Phys. 89, 5647 (2001).
22. W. Li, K. Chen, Y. Y. Yao, J. S. Zhu, and Y. N. Wang, Appl. Phys. Lett. 85, 4717 (2004).
23. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
24. K. T. Kim, and C. I. Kim, Surf. Coat. Technol. 177-178, 774 (2004).
25. N. J. Seong, C. H. Yang, W. C. Shin, and S. G. Yoon, Appl. Phys. Lett. 72, 1374 (1998).
26. K. Watanabe, A. J. Hartmann, R. N. Lamb, and J. F. Scott, J. Appl. Phys. 84, 2170 (1998).
27. R. W. Wolfe and R. E. Newnham, Rev. Solid State Sci. 116, 832 (1969).