Boron interaction with extended defects induced by He-H co-implantation in Si

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 266-270

  Gaudin, G ^a   Cayrel, F ^a   Bongiorno, C ^b   Jerisian R ^a   Dubois, C ^c   Raineri, V ^b   Alquier, D ^a  

^a UNIVERSITÉ DE TOURS   (France)

^b CNR IMM   (Italy)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

Boron interaction; Extended defects; He H co implantation; Silicon devices

Indexed keywords

BORON; HYDROGEN; ION IMPLANTATION; SAMPLING; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

BORON INTERACTION; EXTENDED DEFECTS; HE-H CO-IMPLANTATION; SILICON DEVICES;

HELIUM;

EID: 27844460997     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.080     Document Type: Conference Paper

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