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IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2004, Pages 15-18

Reliability response of plasma nitrided gate dielectrics to physical and electrical CET-scaling

(6) Geilenkeuser, R a Wieczorek, K a Mantei, T a Graetsch, F a Herrmann, L a Weidner, J O a

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; DOPING (ADDITIVES); GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS DEVICES; NITRIDING; PLASMA APPLICATIONS; POLYSILICON; RELIABILITY;

CAPACITANCE EQUIVALENT THICKNESS (CET); DOPING LEVELS; GATE DIELECTRICS; STRESS-INDUCED LEAKAGE CURRENT (SILC);

DIELECTRIC MATERIALS;

EID: 21644455957 PISSN: 19308841 EISSN: 23748036 Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

References (6)

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- P.A. Kraus, K. Ahmed, T.C. Chua, M. Ershov, H. Karbasi, C.S. Olsen, F. Nouri, J. Holland, R. Zhao, G. Miner, A. Lepert, 2003 Symp. VLSI Tech. Dig. Tech. Papers.
- 2003 Symp. VLSI Tech. Dig. Tech. Papers
- Kraus, P.A.¹ Ahmed, K.² Chua, T.C.³ Ershov, M.⁴ Karbasi, H.⁵ Olsen, C.S.⁶ Nouri, F.⁷ Holland, J.⁸ Zhao, R.⁹ Miner, G.¹⁰ Lepert, A.¹¹

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- P.E. Nicollian, W.R. Hunter, J.C. Hu, Proc. Int. Reliability Physics Symp., 7 (2000).
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- Nicollian, P.E.¹ Hunter, W.R.² Hu, J.C.³

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- Y. Wu, G. Lucovsky, Y.-M. Lee, IEEE Trans. Electr. Dev., 1361 (2000).
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- J.M. McKenna, E.Y. Wu, S.-H. Lo, Proc. Int. Reliability Physics Symp., 16 (2000).
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