Observation of interfacial void formation in bonded copper layers

Applied Physics Letters

Volumn 87, Issue 20, 2005, Pages 1-3

  Tan, C S ^a   Reif, R ^a   Theodore, N D ^b   Pozder, S ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDED COPPER LAYERS; BONDING INTERFACES; BONDING STRENGTH;

ANNEALING; BONDING; COPPER; STRESS RELAXATION; TEMPERATURE DISTRIBUTION; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 27744576375     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2130534     Document Type: Article

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