Excess noise measurement in In0.53Ga0.47As

IEEE Photonics Technology Letters

Volumn 17, Issue 11, 2005, Pages 2412-2414

  Goh, Yu Ling ^a   Ng, Jo Shien ^a   Tan, Chee Hing ^a   Ng, Wai Keng ^a   David, John P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche photodiodes; Excess noise factor; Impact ionization; In0.53Ga0.47As; Ionization coefficients; Multiplication

Indexed keywords

AVALANCHE DIODES; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; IMPACT IONIZATION; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES; ELECTRON INJECTION; EXCESS NOISE FACTOR; IONIZATION COEFFICIENT;

PHOTODIODES;

EID: 27744518215     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.857239     Document Type: Article

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