Low electric field hole impact ionization coefficients in GaInAs and GaInAsP

IEEE Electron Device Letters

Volumn 21, Issue 11, 2000, Pages 509-511

  Shamir, N ^a   Ritter, D ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; HOLE MOBILITY; IMPACT IONIZATION; PHOTODIODES; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

GALLIUM INDIUM ARSENIC PHOSPHIDE; GALLIUM INDIUM ARSENICLE; OHMIC VOLTAGE DROP;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034317068     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.877192     Document Type: Article

References (14)

1. 53As heterojunction bipolar transistors," Appl. Phys. Lett., vol. 60, pp. 3150-3152, 1992.
2. G. G. Zhou, A. Fischer-Colbrie, and J. S. Harris, Jr., "V kink in INAlAs/InGaAs MODFET's due to weak impact ionization process in the InGaAs channel," in Proc. 6th Int. Conf. Indium Phosphide and Related Materials, 1994, pp. 435-438.
3. F. Capasso, "Physics of avalanche photodiodes," in Semiconductors and Semimetals, W. T. Tsang, Ed. New York: Academic, 1985, vol. 22, pp. 1-172.
4. y," IEEE J. Quantum Electron., vol. QE-21, pp. 1326-1338, 1985.
5. 47As," Semiconduct. Sci. Technol., vol. 5, pp. 789-791, 1990.
6. E. Zanoni et al., "Extension of impact ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's," IEEE Electron Device Lett., vol. 14, pp. 69-71, 1993.
7. C. Canali et al., "Measurement of the electron ionization coefficient at low electric fields in GaAs based heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 15, pp. 354-356, 1994.
8. C. Canali et al., "Measurement of the electron ionization coefficient at low electric fields in InGaAs based heterojunction bipolar transistors," Appl. Phys. Lett., vol. 66, pp. 1095-1097, 1995.
9. N. Shamir, D. Ritter, and C. Cytermann, "Beryllium doped InP/InGaAsP heterojunction bipolar trransistors," Solid-State Electron., vol. 42, pp. 2039-2045, 1998.
10. N. Shamir and D. Ritter, "Lower limit of method for the extraction of ionization coefficients from the electrical characteristics of heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 47, pp. 488-490, 2000.
11. 47As/InP HBTs," IEEE Electron Device Lett., vol. 18, pp. 619-621, 1997.
12. J. Bude and K. Hoss, "Thresholds of impact ionization in semiconductors," J. Appl. Phys., vol. 72, pp. 3554-3561, 1992.
13. R. A. Hamm, D. Ritter, and H. Temkin, "Compact metalorganic molecular beam epitaxy growth system," J. Vac. Sci. Technol. A, vol. 12, pp. 2790-2794, 1994.
14. K. Taguchi et al., "Temperature dependence of the impact ionization coefficients in InP, J. Appl. Phys., vol. 59, pp. 476-481, 1986.