Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 197-199

  Buttari, D ^b   Chini, A ^b   Meneghesso, G ^a,b   Zanoni, E ^a,b   Sawdai, D ^a,c   Pavlidis, D ^a,c   Hsu, S S H ^c  

^a IEEE

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Early effect; HBT; Impact ionization

Indexed keywords

APPROXIMATION THEORY; ELECTRIC FIELD EFFECTS; IMPACT IONIZATION; PHOTOMULTIPLIERS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

NUMERICAL CORRECTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035338351     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919227     Document Type: Article

References (9)