2D QM simulation and optimization of decanano non-overlapped MOS devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 225-228

  Gusmeroli, R ^a   Spinelli, A S ^b   Pirovano, A ^a   Lacaita, A L ^a   Boeuf F ^c   Skotnicki, T ^c  

^a IFN CNR   (Italy)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LOGIC CIRCUITS; LOGIC DESIGN; QUANTUM THEORY; SWITCHING; THRESHOLD VOLTAGE; WAVE EQUATIONS;

ELECTRIC CHARGE QUANTIZATION; GATE CAPACITANCE;

MOSFET DEVICES;

EID: 0842309809     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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