Quantum transport model for sub-100 nm CMOS devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4600, Issue , 2001, Pages 117-122

  Yu, Zhiping ^a,c   Yergeau, D W ^a   Dutton, R W ^a   Svizhenko, A ^b   Anantram, M P ^b  

^a Stanford University   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

^c TSINGHUA UNIVERSITY   (China)

Author keywords

Carrier transport; Density gradient (DG); MOS; Non equilibrium Green's function (NEGF); Quantum mechanics

Indexed keywords

BENCHMARKING; GREEN'S FUNCTION; MATHEMATICAL MODELS; MOSFET DEVICES; POISSON EQUATION; QUANTUM THEORY; THRESHOLD VOLTAGE;

QUANTUM TRANSPORT MODEL;

CMOS INTEGRATED CIRCUITS;

EID: 0035772426     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.444663     Document Type: Article

References (3)

1. C.S. Rafferty, Z. Yu, B. Biegel, M.G. Ancona, J. Bude, and R.W. Dutton, SISPAD '98 p. 137, Lueven, Belgium, Sept. 1998.
2. A. Svizhenko, M.P. Anantram, and T.R. Govindan, p. 112, IWCE, Glasgow, U.K., 2000.
3. M.G. Ancona and G.J. Iafrate, p. 9536, Physical Review B, vol. 39, no. 13, 1 May 1989.