SCOPUS 정보 검색 플랫폼

Volumn 8, Issue 11, 2005, Pages

Strain relaxed SiGe buffer prepared by means of thermally driven relaxation and CMP

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL MECHANICAL POLISHING; RELAXATION PROCESSES; SILICON WAFERS; STRAIN; SURFACE ROUGHNESS;

DISLOCATION DENSITY; DISLOCATION FLOW; THERMALLY DRIVEN DISLOCATION; THREADING DISLOCATIONS;

SILICON COMPOUNDS;

EID: 27744511260 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2050567 Document Type: Article

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.