Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 530-533

  Peng, C S ^a   Chen, H ^a   Zhao, Z Y ^a   Li, J H ^a   Dai, D Y ^a   Huang, Q ^a   Zhou, J M ^a   Zhang, Y H ^b   Tung, C H ^c   Sheng, T T ^c   Wang, J ^c  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL RELAXATION; DISLOCATIONS (CRYSTALS); SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STACKING FAULTS;

LOW DISLOCATION DENSITY; STRAIN RELAXATION;

CRYSTAL GROWTH;

EID: 0032676480     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01399-2     Document Type: Article

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