Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 693-696

  Sawano, K ^a   Arimoto, K ^b   Hirose, Y ^c   Koh, S ^a   Usami, N ^d   Nakagawa, K ^b   Hattori, T ^c   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF YAMANASHI   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Modulation doped structure; A3. Chemical mechanical polishing; A3. Molecular beam epitaxy; B1. SiGe; B1. Strained silicon

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); HOLE MOBILITY; MOLECULAR BEAM EPITAXY; NUCLEATION; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY;

BUFFER LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037382428     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02286-8     Document Type: Conference Paper

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