Some aspects of the RHEED behavior of low-temperature GaAs growth

Semiconductors

Volumn 39, Issue 11, 2005, Pages 1352-1355

  Nemcsics, A ^a,b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b Inst of Microlectron and Technol   (Hungary)

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[No Author keywords available]

Indexed keywords

EID: 27744463256     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.2128465     Document Type: Article

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