Fundamental issues of device-relevant low temperature GaAs and related materials properties

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 304-310

  Missous, Mohamed ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Defect controlled materials; GaAs; Low temperature; Molecular beam epitaxy

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTROOPTICAL EFFECTS; HIGH ELECTRON MOBILITY TRANSISTORS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTING MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

DEFECT CONTROLLED MATERIALS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0000869169     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01762-X     Document Type: Article

References (32)

1. G.M. Metze and A.R. Calawa, Appl. Phys. Lett., 42 (1983) 818.
2. M. Missous and K.E. Singer, Appl. Phys. Lett., 50 (11) (1987) 694.
3. C.E.C. Wood, J. Woodcock and J.J. harris, Inst. Phys. Conf. Ser., 45 (1979) 25.
4. F.W. Smith, A.R. Calawa, C.L. Chen, M.J. Manfra and L.J. Mahoney, IEEE Electron. Device Lett., 9 (1988) 77.
5. D.C. Look, Thin Solid Films, 231 (1993) 61.
6. A.Y. Cho and J.R. Arthur, Progr. Solid State Chem., 10 (1975) 157.
7. R.A. Stall, C.E.C. Wood, P.D. Kirchner and L.F. Eastman, Electron. Lett., 16 (1980) 171.
8. M.R. Melloch, N. Otsuka, J.M. Woodall, A.C. Warren and J.L. Freeouf, Appl. Phys. Lett., 57 (15) (1990) 1631.
9. S. Gupta, M.Y. Frankel, J.A. Valdmanis, J.F. Whitaker, G.A. Mourou, F.W. Smith and A.R. Calawa, Appl. Phys. Lett., 59 (1991) 3276.
10. C.L. Chen, F.W. Smith, B.J. Clifton, L.J. Mahoney, M.J. Manfra and A.R. Calawa, IEEE Electron. Device Lett., 12 (1991) 306.
11. T. Murotani, T. Shimanoe and S. Mitsui, J. Cryst. Growth, 45 (1978) 302.
12. P. Blood and J.J. Harris, J. Appl. Phys., 56( 1984) 993.
13. M. Missous, Semicond. Sci. Technol., 7 (1) (1992) A249.
14. M. Missous and S. O'Hagan, J. Appl. Phys., 75 (7) (1994) 3396.
15. M. Missous, J. Appl. Phys., 78 (7) (1995) 4467.
16. J.P. Ibbetson, R.P. Mirin, U.K. Mishra and A.C. Gossard, J. Vac. Sci. Technol. B, 12 (1994) 1050.
17. S. O'Hagan and M. Missous, J. Appl. Phys., 75 (12) (1994) 7835.
18. M. Kaminska, Z. Liliental-Weber, E.R. Weber and T. George, Appl. Phys. Lett., 54 (1989) 1881.
19. Z. Liliental-Weber, J. Ager, D.C. Look, X.W. Lin, X. Liu, J. Nishio, K. Nivhols, W. Schaff, W. Swider, K. Wang, J. Washburn, E.R. Weber and J. Whitaker, Semi-insulating III-V Conf., Warsaw, Poland, 1994, in press.
20. M.O. Manasreh, D.C. Look, K.R. Evans and C.E. Stutz, Phys. Rev. B, 41 (1990) 10 272.
21. S.A. McQuaid, R.C. Newman, M. Missous and S. O'Hagan, Appl. Phys. Lett., 61 (25) (1992) 3008.
22. K. Man Yu, M. Kaminska and Z. Liliental-Weber, J. Appl. Phys., 72 (7) (1992) 2850.
23. M. Ogawa and T. Baba, Jpn. J. Appl. Phys., 24 (8) (1985) L572.
24. T.Y. Tan, H.M. Tou and U.M. Gosele, Appl. Phys. A, 56 (1993) 1.
25. M.O. Manasreh, K.R. Evans, C.E. Stutz, D.C. Look and J. Hemsley, Appl. Phys. Lett., 60 (19) (1992) 2377.
26. D.E. Bliss, W. Waluckiewicz, J.W. Ager, E.E. Haller, K.T. Chan and S. Tanigawa, J. Appl. Phys., 71 (4) (1992) 1699.
27. F.W. Smith, MRS Symp. Proc., 241 (1992) 3.
28. K.-M. Lipka, B. Splingart, U. Erben and E. Kohn, Inst. Phys. Conf. Ser., 136 (1993) 99.
29. M.P. Paktar, T.P. Chin, J.M. Woodall, M.S. Lundstrom and M.R. Melloch, Appl. Phys. Lett., 66 (1995) 1412.
30. D.C. Look, Z-Q. Fang, J.R. Sizelove and C.E. Stutz, Phys. Rev. Lett., 70 (1990) 465.
31. J.F. Whitaker, Mater. Sci. Eng., B22 (1993) 9.
32. T. Motet, J. Nees, S. Williamson and G. Mourou, MRS Symp. Proc., 241 (1992) 223.