MBE growth of strained InxGa1-xAs on GaAs(001)

Physica Status Solidi (A) Applied Research

Volumn 155, Issue 2, 1996, Pages 427-437

  Nemcsics, A ^a   Olde, J ^b   Geyer, M ^b   Sghnurpfeil, R ^b   Manzke, R ^b   Skibowski, M ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTIMIZATION; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; SURFACE TREATMENT;

INDIUM GALLIUM ARSENIDE; INTENSITY OSCILLATIONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030165489     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211550216     Document Type: Article

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