STM and RHEED studies on low-temperature growth of GaAs(0 0 1)

Surface Science

Volumn 514, Issue 1-3, 2002, Pages 350-355

  Nagashima, A ^a   Tazima, M ^a   Nishimura, A ^a   Takagi, Y ^a   Yoshino, J ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Scanning tunneling microscopy; Surface roughening

Indexed keywords

MOLECULAR BEAM EPITAXY; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA; SURFACE ROUGHNESS;

MULTILAYERED MORPHOLOGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037055552     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01652-7     Document Type: Article

References (21)