Correlation between the critical layer thickness and the decaytime constant of RHEED oscillations in strained inxGa1-xAs/GaAs structures

Thin Solid Films

Volumn 367, Issue 1-2, 2000, Pages 302-305

  Nemcsics, Akos ^a,b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b NONE   (Hungary)

Author keywords

Critical thickness of the epilayer; Intensity oscillations of the reflection high energy electron diffraction specular beam; Molecular beam epitaxy growth of strained heterostructures

Indexed keywords

EID: 0000462395     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00698-2     Document Type: Article

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