High performance 660nm InGaP/AlGaInP quantum well metal cladding ridge waveguide laser diode

Electronics Letters

Volumn 32, Issue 16, 1996, Pages 1488-1490

  Sun, D ^a   Treat, D W ^a   Bour, D P ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FABRICATION; HETEROJUNCTIONS; LASER MODES; METAL CLADDING; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS;

SINGLE TRANSVERSE MODE; SLOPE EFFICIENCY; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0030215973     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961003     Document Type: Article

References (3)