High-efficiency GaInP-AlGaInP ridge waveguide single-mode lasers operating at 650 nm

IEEE Photonics Technology Letters

Volumn 10, Issue 11, 1998, Pages 1533-1535

  Kongas J ^a   Savolainen, P ^b   Toivonen, M ^b   Orsila, S ^b   Corvini, P ^c   Jansen, M ^c   Nabiev, R F ^c   Pessa, M ^b  

^a Tutcore Ltd   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c Coherent Semiconductor Group ^*  (United States)

Author keywords

Epitaxial growth; Ridge waveguides; Semiconductor lasers

Indexed keywords

LASER MODES; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

RIDGE WAVEGUIDES; SINGLE-MODE LASERS;

SEMICONDUCTOR LASERS;

EID: 0032207292     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.726740     Document Type: Article

References (7)

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