Domain structure and fatigue behavior of La3+-doped SrBi 2Ta2O9 thin films

Journal of the American Ceramic Society

Volumn 88, Issue 1, 2005, Pages 85-88

  Liu, Jingsong ^a   Zhang, Shuren ^a   Yang, Chengtao ^a   Dai, Linshan ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTOMETERS; DOPING (ADDITIVES); FERROELECTRICITY; PEROVSKITE; PULSED LASER DEPOSITION; STRONTIUM COMPOUNDS;

FERROELECTRIC-PROPERTY MEASUREMENTS; PIEZORESPONSE SCANNING PROBE MICROSCOPY; REMANENT POLARIZATION; STRAIN-STRESS AGGRAVATION;

LANTHANUM COMPOUNDS;

EID: 27644526147     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2004.00026.x     Document Type: Article

References (21)

1. A. D. Rae, J. G. Thompson, and R. L. Withers, "Structure Refinement of Commensurately Modulated Bismuth Strontium Tantalate," Acta Crystallogr., Sect. B: Struct. Sci., 48, 418-28 (1992).
2. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, "Lanthanum-Substituted Bismuth Titanate for use in Non-Volatile Memories," Nature, 401, 682-4 (1999).
3. C. A. Araujo, J. D. Cuchlaro, L. D. McMillan, and M. C. Scott, "Fatigue-free Ferroelectric Capacitors with Platinum Electrodes," Nature (London), 374, 627-9 (1995).
4. 9 Thin Films," Appl. Phys. Lett., 66, 221-3 (1995).
5. 9," Jpn. J. Appl. Phys., Part 1, 37, 2554-8 (1998).
6. T. Noguchi, T. Hase, and Y. Miyasaka, "Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature," Jpn. J. Appl. Phys., Part 1, 35, 4900-4 (1996).
7. 9 Thin Films with Change of Heat-treatment Temperature," Jpn. J. Appl. Phys., Part 1, 37, 597-601 (1998).
8. 9 Ceramics," Appl. Phys. Lett., 76, 103-5 (2000).
9. 9 Ceramics," J. Mater. Sci.: Mater. Electron., 14, 229-31 (2003).
10. 9 Thin Films Formed by Pulsed Laser Ablation Technique," J. Electroceram., 5, 7-20 (2000).
11. 9/Pt Ferroelectric Thin Film Capacitors," J. Appl. Phys., 90, 4130-3 (2001).
12. 3 Electrodes," Appl. Phys. Lett., 76, 1758-60 (2000).
13. 9 Thin Films," Appl. Phys. Lett., 75, 1155-7 (1999).
14. 9 Thin Films," J. Mater. Res., 12, 1569 (1997).
15. J. Liu, S. Zhang, J. Zhou, and W. You, "Microstructure and Electrical Properties of Highly Grain-Orientated SBT Ceramics Induced by PZT Nanopowder Doping," J. Mater. Sci. Lett. (in press).
16. 9 Thin Films Investigated at Nanoscale," J. Appl. Phys., 89, 1836-43 (2001).
17. 9 Films Deposited by Pulsed Laser Deposition," Appl. Phys. Lett., 76, 106-8 (2000).
18. 9 Films," Thin Solid Film, 386, 59-67 (2001).
19. 3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition," J. Appl. Phys., 89, 4517-22 (2001).
20. U. Robels and G. Arlt, "Domain Wall Clamping in Ferroelectrics by Orientation of Defects," J. Appl. Phys., 73, 3454-60 (1993).
21. 9 Ferroelectric Thin Films," Appl. Phys. Lett., 78, 973-5 (2001).