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Volumn , Issue , 2004, Pages 638-641

Advanced compact models: Gateway to modern CMOS design

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; MOSFET DEVICES; CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT DESIGN;

EID: 27644473282     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (19)
  • 6
    • 0242332717 scopus 로고    scopus 로고
    • Quasi-static and non-quasi-static compact MOSFET models based on symmetrically linearization of the bulk and inversion charges
    • Nov.
    • H. Wang, T.-L. Chen, and G. Gildenblat, "Quasi-Static and Non-Quasi-Static Compact MOSFET Models Based on Symmetrically Linearization of the Bulk and Inversion Charges," IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2262-2272, Nov. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.11 , pp. 2262-2272
    • Wang, H.1    Chen, T.-L.2    Gildenblat, G.3
  • 7
    • 0035247818 scopus 로고    scopus 로고
    • Analytical approximation for the MOSFET surface potential
    • Feb.
    • T.-L. Chen and G. Gildenblat, "Analytical Approximation for the MOSFET Surface Potential," Solid-State Electronics, vol. 45, no. 2, p. 335, Feb. 2001.
    • (2001) Solid-state Electronics , vol.45 , Issue.2 , pp. 335
    • Chen, T.-L.1    Gildenblat, G.2
  • 8
    • 4344683399 scopus 로고    scopus 로고
    • Physics-based mathematical conditioning of the MOSFET surface potential equation
    • in press
    • W. Wu, T.-L. Chen, G. Gildenblat, and C. C. McAndrew, "Physics-Based Mathematical Conditioning of the MOSFET Surface Potential Equation," IEEE Trans. Electron Devices, 2004 (in press).
    • (2004) IEEE Trans. Electron Devices
    • Wu, W.1    Chen, T.-L.2    Gildenblat, G.3    McAndrew, C.C.4
  • 15
    • 84888597198 scopus 로고    scopus 로고
    • A robust and physical BSJM3 non-quasi-static transient and AC small-signal model for circuit simulation
    • M. Chan, K. Y. Hui, C. Hu, and P. K. Ko, "A Robust and Physical BSJM3 Non-Quasi-Static Transient and AC Small-Signal Model for Circuit Simulation," IEEE Trans. Electron Devices, vol. 45, pp. 834-841, 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 834-841
    • Chan, M.1    Hui, K.Y.2    Hu, C.3    Ko, P.K.4
  • 17
    • 0000573172 scopus 로고
    • A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs
    • Oct.
    • C. Turchetti, P. Mancini, and G. Masetti, "A CAD-oriented Non-Quasi-Static Approach for the Transient Analysis of MOS ICs," IEEE J. Solid-State Circuits, vol. 21, pp. 827-836, Oct. 1986.
    • (1986) IEEE J. Solid-state Circuits , vol.21 , pp. 827-836
    • Turchetti, C.1    Mancini, P.2    Masetti, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.