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Journal of the Korean Physical Society

Volumn 47, Issue SUPPL. 2, 2005, Pages

Metal/insulator/semiconductor structure using Ga 2O 3 layer by plasma enhanced atomic layer deposition

(6) Lee, Sang A a Hwang, Jae Yeol b Kim, Jong Pil b Cho, Chae Ryong b Lee, Won Jae c Jeong, Se Young a

a Pusan National University (South Korea)

b Korea Basic Science Institute (KBSI) (South Korea)

c Dong Eui University (South Korea)

Author keywords

Capacitance voltage; Ga 2O 3; Gate oxide; Plasma enhanced atomic layer deposition

Indexed keywords

EID: 27444443022 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.