Monte Carlo simulation of secondary electron and backscattered electron images in scanning electron microscopy for specimen with complex geometric structure

Scanning

Volumn 27, Issue 5, 2005, Pages 254-267

  Li, H M ^a   Ding, Z J ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Backscattered electron; Constructive solid geometry; Monte Carlo; Scanning electron microscopy images; Secondary electron

Indexed keywords

COMPUTATIONAL GEOMETRY; ELASTICITY; ELECTRON SCATTERING; IMAGE RECONSTRUCTION; MONTE CARLO METHODS; PERMITTIVITY; RAY TRACING; SCANNING ELECTRON MICROSCOPY;

BACKSCATTERED ELECTRON; CONSTRUCTIVE SOLID GEOMETRY; SCANNING ELECTRON MICROSCOPY IMAGES; SECONDARY ELECTRONS;

ELECTRONS;

ARTICLE; BACKSCATTERED ELECTRON MICROSCOPY; COMPLEX FORMATION; DIELECTRIC CONSTANT; ELECTRON TRANSPORT; GEOMETRY; HUMAN; MATHEMATICAL ANALYSIS; MONTE CARLO METHOD; NANOTECHNOLOGY; PHYSICAL MODEL; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SECONDARY ELECTRON TRANSPORT; STRUCTURE ANALYSIS;

ELECTRONS;

EID: 27344435281     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950270506     Document Type: Article

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