Two-dimensional simulation and modeling in scanning electron microscope imaging and metrology research

Scanning

Volumn 24, Issue 4, 2002, Pages 179-185

  Postek, Michael T ^a   Vladár, András E ^a   Lowney, Jeremiah R ^a   Keery, William J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Critical dimension; Linewidth; Metrology; Modeling; Monte Carlo; Scanning electron microscope

Indexed keywords

COMPUTER SIMULATION; IMAGING TECHNIQUES; MONTE CARLO METHODS;

SIGNAL GENERATION;

SCANNING ELECTRON MICROSCOPY;

ARTICLE; COMPUTER SIMULATION; ELECTRON BEAM; IMAGE ANALYSIS; IMAGING SYSTEM; MODEL; MONTE CARLO METHOD; PRIORITY JOURNAL; RESEARCH; SCANNING ELECTRON MICROSCOPY; X RAY MICROANALYSIS;

EID: 0036323822     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950240404     Document Type: Article

References (14)

1. An inverse scattering approach to SEM line width measurements
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5. Monte Carlo simulation of scanning electron microscope signals for lithographic metrology
6. A Monte Carlo model for SEM linewidth metrology
7. Workshop report 3: Edge positions from scanning electron microscope signals by comparing models with measurements
8. Low accelerating voltage inspection and linewidth measurement in the scanning electron microscope
9. Image sharpness measurement in scanning electron microscopy, part 1
10. X-ray lithography mask metrology: Use of transmitted electrons in an SEM for linewidth measurement
11. Workshop report 1: Scanning electron microscope metrology as related to a defined edge structure
12. Interlaboratory study on the lithographically produced scanning electron microscope magnification standard prototype
13. Image sharpness measurement in scanning electron microscopy, part 2