Comment on "structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction"

Physical Review Letters

Volumn 94, Issue 18, 2005, Pages

  Bongiorno, Angelo ^a   Pasquarello, Alfredo ^b,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b EPFL   (Switzerland)

^c INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOELECTRON DIFFRACTION"; SIO2/SI(100);

ELECTRON DIFFRACTION; INTERFACES (MATERIALS); PHOTOELECTRICITY; SILICON COMPOUNDS;

STRUCTURAL ANALYSIS;

EID: 27144548849     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.94.189601     Document Type: Article

References (10)

1. S. Dreiner, M. Schürmann, and C. Westphal, Phys. Rev. Lett. 93, 126101 (2004). PRLTAO 0031-9007 10.1103/PhysRevLett.93.126101
2. Y. Tu and J. Tersoff, Phys. Rev. Lett. 84, 4393 (2000). PRLTAO 0031-9007 10.1103/PhysRevLett.84.4393
3. A. Bongiorno, A. Pasquarello, M.S. Hybertsen, and L.C. Feldman, Phys. Rev. Lett. 90, 186101 (2003); PRLTAO 0031-9007 10.1103/PhysRevLett.90.186101
4. A. Bongiorno and A. Pasquarello, Appl. Phys. Lett. 83, 1417 (2003). APPLAB 0003-6951 10.1063/1.1604470
5. A. Pasquarello, M.S. Hybertsen, and R. Car, Phys. Rev. Lett. 74, 1024 (1995); PRLTAO 0031-9007 10.1103/PhysRevLett.74.1024
6. A. Pasquarello M.S. Hybertsen R. Car Phys. Rev. B PRBMDO 0163-1829 53, 10942 (1996); 10.1103/PhysRevB.53.10942
7. A. Pasquarello M.S. Hybertsen R. Car Appl. Phys. Lett. 68, 625 (1996); APPLAB 0003-6951 10.1063/1.116489
8. A. Pasquarello M.S. Hybertsen R. Car Appl. Surf. Sci. 104/105, 317 (1996). ASUSEE 0169-4332 10.1016/S0169-4332(96)00164-X
9. D. Pierreux and A. Stesmans, Phys. Rev. B PRBMDO 0163-1829 66, 165320 (2002). 10.1103/PhysRevB.66.165320
10. A. Pasquarello, M.S. Hybertsen, and R. Car, Nature (London) NATUAS 0028-0836 396, 58 (1998). 10.1038/23908