An impedance spectroscopic study of n-type phosphorus-doped diamond

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Curat, Stephane ^a   Ye, Haitao ^a,c   Gaudin, Olivier ^a,d   Jackman, Richard B ^a   Koizumi, Satoshi ^b  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c NTT Basic Research Laboratories   (Japan)

^d UNIVERSITY OF ST ANDREWS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION PATHS; DIAMOND GROWTH; IMPEDANCE SPECTROSCOPY; PHOSPHORUS DONOR LEVEL;

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ELECTRIC IMPEDANCE; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; OHMIC CONTACTS; PHOSPHORUS; SPECTROSCOPIC ANALYSIS; THIN FILMS;

DIAMONDS;

EID: 27144483849     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2058183     Document Type: Article

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