Oxygen impurities at the homoepitaxially grown diamond-substrate interface analyzed by secondary ion mass spectrometry

Diamond and Related Materials

Volumn 5, Issue 1, 1996, Pages 34-37

  Ando, Toshihiro ^a   Haneda, Hajime ^a   Akaishi, Minoru ^a   Sato, Yoichiro ^a   Kamo, Mutsukazu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Annealing; Interface; Oxygen; SIMS

Indexed keywords

EID: 0041526150     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-9635(95)00337-1     Document Type: Article

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