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Volumn 201, Issue , 1999, Pages 914-918
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Improved carrier confinement in GaInAs/AlGaAs lasers by MBE grown short period superlattice quantum well barriers
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
HIGH TEMPERATURE PROPERTIES;
INTERFACES (MATERIALS);
QUANTUM EFFICIENCY;
QUANTUM WELL LASERS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR SUPERLATTICES;
CARRIER CONFINEMENT;
QUANTUM WELL BARRIERS;
THRESHOLD CURRENT DENSITY;
MOLECULAR BEAM EPITAXY;
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EID: 0344182451
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)01484-5 Document Type: Article |
Times cited : (7)
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References (12)
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