Ge/Si islands in a three-dimensional island crystal studied by x-ray diffraction

Journal of Applied Physics

Volumn 98, Issue 7, 2005, Pages

  Novak J ^a,b   Holy V ^b,c   Stangl, J ^a   Fromherz, T ^a   Zhong, Zhenyang ^a   Chen, Gang ^a   Bauer, G ^a   Struth, B ^d  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b MASARYK UNIVERSITY   (Czech Republic)

^c CHARLES UNIVERSITY   (Czech Republic)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING; ISLAND CRYSTALS; PREPATTERNED (001) SI SUBSTRATE;

COMPOSITION; CRYSTAL GROWTH; GERMANIUM COMPOUNDS; SELF ASSEMBLY; SILICON COMPOUNDS; STRAIN; X RAY DIFFRACTION;

CRYSTALS;

EID: 27144435496     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2073974     Document Type: Article

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