Physical compact MOSFET model, including quantum mechanical effects, for statistical circuit design applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 937-940

  Rios, Rafael ^a   Arora, Narain D ^a   Huang, Cheng Liang ^a   Khalil, Nadim ^a   Faricelli, John ^a   Gruber, Len ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; GATES (TRANSISTOR); OXIDES; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

DEEP SUBMICRON DEVICES; POLYSILICON DEPLETION; STATISTICAL CIRCUIT DESIGN; THIN GATE OXIDE THICKNESS;

MOSFET DEVICES;

EID: 0029543661     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)