-
1
-
-
69949151296
-
An integrated multispectral IR detector structure
-
San Francisco, CA, October 2-4
-
T.N. Casselman, D.T. Walsh, J.M. Myrosznyk, K. Kosai, W.A. Radford, E.F. Schultz and O.K. Wu, "An Integrated Multispectral IR Detector Structure", Extended Abstracts of the 1990 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride, San Francisco, CA, October 2-4, 1990.
-
(1990)
Extended Abstracts of the 1990 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride
-
-
Casselman, T.N.1
Walsh, D.T.2
Myrosznyk, J.M.3
Kosai, K.4
Radford, W.A.5
Schultz, E.F.6
Wu, O.K.7
-
2
-
-
0010667383
-
Bias-switchable dualband HgCdTe infrared photodetector
-
E.R. Blazejewski, J.M. Arias, G.M. Williams, W. McLevige, M. Zandian and J. Pasko, "Bias-Switchable DualBand HgCdTe Infrared Photodetector", J. Vac. Sci. Technol. B10, pp 1626-1632, 1992.
-
(1992)
J. Vac. Sci. Technol.
, vol.B10
, pp. 1626-1632
-
-
Blazejewski, E.R.1
Arias, J.M.2
Williams, G.M.3
McLevige, W.4
Zandian, M.5
Pasko, J.6
-
3
-
-
0028746636
-
Integrated two-color detection for advanced focal plane array (FPA) applications
-
Infrared Detectors: State of the Art II
-
J.A. Wilson, E.A. Patten, G.R. Chapman, K. Kosai, B. Baumgratz, P. Goetz, S. J. Tighe, R. F. Risser, R. F. Herald, W.A. Radford, Tse Tung, W. A. Terre, "Integrated two-color detection for advanced focal plane array (FPA) applications", SPIE Vol. 2274, Infrared Detectors: State of the Art II, pp 117-125, 1994.
-
(1994)
SPIE
, vol.2274
, pp. 117-125
-
-
Wilson, J.A.1
Patten, E.A.2
Chapman, G.R.3
Kosai, K.4
Baumgratz, B.5
Goetz, P.6
Tighe, S.J.7
Risser, R.F.8
Herald, R.F.9
Radford, W.A.10
Tung, T.11
Terre, W.A.12
-
4
-
-
3142518077
-
HgCdTe focal plane arrays for dual-color mid- And long-wavelength infrared detection
-
E.P.G. Smith, L.T. Pham, G.M. Venzor, E.M. Norton, M.D. Newton, P.M. Goetz, V.K. Randall, A.M. Gallagher, G.K. Pierce, E.A. Patten, R.A. Coussa, K. Kosai, W.A. Radford, L.M. Giegerich, J.M. Edwards, S.M. Johnson, S.T. Baur, J.A. Roth, B. Nosho, T.J. De Lyon, J.E. Jensen, and R.E. Longshore, "HgCdTe Focal Plane Arrays for Dual-Color Mid- and Long-Wavelength Infrared Detection", J. Electron. Mat. 33(6), pp 509-516, 2004.
-
(2004)
J. Electron. Mat.
, vol.33
, Issue.6
, pp. 509-516
-
-
Smith, E.P.G.1
Pham, L.T.2
Venzor, G.M.3
Norton, E.M.4
Newton, M.D.5
Goetz, P.M.6
Randall, V.K.7
Gallagher, A.M.8
Pierce, G.K.9
Patten, E.A.10
Coussa, R.A.11
Kosai, K.12
Radford, W.A.13
Giegerich, L.M.14
Edwards, J.M.15
Johnson, S.M.16
Baur, S.T.17
Roth, J.A.18
Nosho, B.19
De Lyon, T.J.20
Jensen, J.E.21
Longshore, R.E.22
more..
-
5
-
-
0035760455
-
HDVIP FPA technology at DRS infrared technologies
-
Infrared Technology and Applications XXVII; Bjorn F. Andresen, Gabor F. Fulop, Marija Strojnik; Eds
-
M.A. Kinch, "HDVIP FPA technology at DRS Infrared Technologies", Proc. SPIE Vol. 4369, pp 566-578, Infrared Technology and Applications XXVII; Bjorn F. Andresen, Gabor F. Fulop, Marija Strojnik; Eds.
-
Proc. SPIE
, vol.4369
, pp. 566-578
-
-
Kinch, M.A.1
-
6
-
-
0035360005
-
A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays
-
W.E. Tennant, M. Thomas, L.J. Kozlowski, W.V. McLevige, D.D. Edwall, M. Zandian, K. Spariosu, G. Hildebrandt, V. Gil, P. Ely, M. Muzilla, A. Stoltz and J.H. Dinah, "A Novel Simultaneous Unipolar Multispectral Integrated Technology Approach for HgCdTe IR Detectors and Focal Plane Arrays", J. Electron. Mat., 30(6), pp 590-594, 2001
-
(2001)
J. Electron. Mat.
, vol.30
, Issue.6
, pp. 590-594
-
-
Tennant, W.E.1
Thomas, M.2
Kozlowski, L.J.3
McLevige, W.V.4
Edwall, D.D.5
Zandian, M.6
Spariosu, K.7
Hildebrandt, G.8
Gil, V.9
Ely, P.10
Muzilla, M.11
Stoltz, A.12
Dinah, J.H.13
-
7
-
-
3042713317
-
Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates
-
P. Ballet, F. Noel, F. Pettier, S. Plissard, J.P. Zanatta, J. Baylet, O. Gravrand, E. De Borniol, S. Martin, P. Castelein, J.P. Chamonal, A. Million, and G. Destefanis, "Dual-Band Infrared Detectors Made on High-Quality HgCdTe Epilayers Grown by Molecular Beam Epitaxy on CdZnTe or CdTe/Ge Substrates", J. Electronic Materials 33(6), pp 667-672, 2004.
-
(2004)
J. Electronic Materials
, vol.33
, Issue.6
, pp. 667-672
-
-
Ballet, P.1
Noel, F.2
Pettier, F.3
Plissard, S.4
Zanatta, J.P.5
Baylet, J.6
Gravrand, O.7
De Borniol, E.8
Martin, S.9
Castelein, P.10
Chamonal, J.P.11
Million, A.12
Destefanis, G.13
-
8
-
-
10044264488
-
Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates
-
Infrared Technology and Applications XXX
-
D.J. Hall, L. Haworth, N.T. Gordon, J. Giess, J.E. Hails, R.M. Lawrence, A. Graham, R.S. Hall, C. Maltby and T. Ashley, "Long-wavelength infrared focal plane arrays fabricated from HgCdTe grown on silicon substrates", SPIE Defense & Security Symposium Vol. 5406, Infrared Technology and Applications XXX, pp 317-322, 2004.
-
(2004)
SPIE Defense & Security Symposium
, vol.5406
, pp. 317-322
-
-
Hall, D.J.1
Haworth, L.2
Gordon, N.T.3
Giess, J.4
Hails, J.E.5
Lawrence, R.M.6
Graham, A.7
Hall, R.S.8
Maltby, C.9
Ashley, T.10
-
9
-
-
5444249049
-
High-performance long-wavelength HgCdTe infrared detectors grown on silicon substrates
-
D. J. Hall, L. Buckle, N. T. Gordon, J. Giess, J. E. Hails, J. W. Cairns, R. M. Lawrence, A. Graham, R. S. Hall, C. Maltby, and T. Ashley, "High-performance long-wavelength HgCdTe infrared detectors grown on silicon substrates", Appl. Phys.Letts. 85(11), pp 2113-2115, 2004.
-
(2004)
Appl. Phys.Letts.
, vol.85
, Issue.11
, pp. 2113-2115
-
-
Hall, D.J.1
Buckle, L.2
Gordon, N.T.3
Giess, J.4
Hails, J.E.5
Cairns, J.W.6
Lawrence, R.M.7
Graham, A.8
Hall, R.S.9
Maltby, C.10
Ashley, T.11
-
10
-
-
36449000382
-
xTe
-
xTe", J. Appl. Phys. 75(2), pp 1234-1235, 1994.
-
(1994)
J. Appl. Phys.
, vol.75
, Issue.2
, pp. 1234-1235
-
-
Chu, J.H.1
Li, B.2
Liu, K.3
Tang, D.Y.4
-
11
-
-
3042756590
-
Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors
-
R.A. Coussa, A.M. Gallagher, K. Kosai, L.T. Pham, G.K. Pierce, E.P. Smith, G.M. Venzor, T.J. De Lyon, J.E. Jensen, B.Z. Nosho, J.A. Roth, and J.R.Waterman, "Spectral Crosstalk by Radiative Recombination in Sequential-Mode, Dual Mid-Wavelength Infrared Band HgCdTe Detectors", J. Electron. Mat. 33(6), pp 517-525, 2004.
-
(2004)
J. Electron. Mat.
, vol.33
, Issue.6
, pp. 517-525
-
-
Coussa, R.A.1
Gallagher, A.M.2
Kosai, K.3
Pham, L.T.4
Pierce, G.K.5
Smith, E.P.6
Venzor, G.M.7
De Lyon, T.J.8
Jensen, J.E.9
Nosho, B.Z.10
Roth, J.A.11
Waterman, J.R.12
-
14
-
-
0043269242
-
Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates
-
C. D. Maxey, J. P. Camplin, I. T. Guilfoy, J. Gardener, R. A. Lockett, C. L. Jones, P. Capper, M.Houlton, and N. T. Gordon, "Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates", J. Electron. Mat. 32, pp 656-660, 2003.
-
(2003)
J. Electron. Mat.
, vol.32
, pp. 656-660
-
-
Maxey, C.D.1
Camplin, J.P.2
Guilfoy, I.T.3
Gardener, J.4
Lockett, R.A.5
Jones, C.L.6
Capper, P.7
Houlton, M.8
Gordon, N.T.9
-
15
-
-
0029306956
-
Integrated in-situ wafer and system monitoring for the growth of CdTe/ZnTe/GaAs/Si for mercury cadmium telluride epitaxy
-
S. J. C. Irvine, J. Bajaj, R. V. Gil, and H. Glass, "Integrated in-situ wafer and system monitoring for the growth of CdTe/ZnTe/GaAs/Si for mercury cadmium telluride epitaxy", J. Electron. Mat. 24, pp 457-465, 1995.
-
(1995)
J. Electron. Mat.
, vol.24
, pp. 457-465
-
-
Irvine, S.J.C.1
Bajaj, J.2
Gil, R.V.3
Glass, H.4
-
16
-
-
0343827033
-
Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on silicon substrates
-
K. Shigenaka, K. Matsushita, L. Sugiura, F. Nakata and K. Hirahara, M. Uchikoshi, M. Nagashima and H. Wada, "Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on silicon substrates" J. Electron. Mat. 25, pp 1347-1352, 1996.
-
(1996)
J. Electron. Mat.
, vol.25
, pp. 1347-1352
-
-
Shigenaka, K.1
Matsushita, K.2
Sugiura, L.3
Nakata, F.4
Hirahara, K.5
Uchikoshi, M.6
Nagashima, M.7
Wada, H.8
-
17
-
-
0000106202
-
Growth of (111) HgCdTe on (100) Si by MOVPE using metal organic tellurium absorption and annealing
-
K. Maruyama, H. Nishino, T. Okamoto, S. Murakami, T. Saito, Y. Nishijima, M. Uchikoshi, M. Nagahima and H. Wada, "Growth of (111) HgCdTe on (100) Si by MOVPE using metal organic tellurium absorption and annealing" J. Electron. Mat. 25, pp 1353-1357, 1996.
-
(1996)
J. Electron. Mat.
, vol.25
, pp. 1353-1357
-
-
Maruyama, K.1
Nishino, H.2
Okamoto, T.3
Murakami, S.4
Saito, T.5
Nishijima, Y.6
Uchikoshi, M.7
Nagahima, M.8
Wada, H.9
-
18
-
-
0037596996
-
Direct growth of CdTe on (100), (211), and (111) Si by metal organic chemical vapour deposition
-
H. Ebe, T. Okamoto, H. Nishino, T. Saito and Y. Nishijima, M. Uchikoshi, M. Nagashima and H. Wada, "Direct growth of CdTe on (100), (211), and (111) Si by metal organic chemical vapour deposition" J. Electron. Mat. 25, pp 1358-1361, 1996.
-
(1996)
J. Electron. Mat.
, vol.25
, pp. 1358-1361
-
-
Ebe, H.1
Okamoto, T.2
Nishino, H.3
Saito, T.4
Nishijima, Y.5
Uchikoshi, M.6
Nagashima, M.7
Wada, H.8
-
20
-
-
0040125012
-
Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates
-
T. J. de Lyon, J. A. Roth, O. K. Wu, S. M. Johnson, and C. A. Cockrum, "Direct molecular-beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates", Appl. Phys. Lett. 63, pp 818-820, 1993.
-
(1993)
Appl. Phys. Lett.
, vol.63
, pp. 818-820
-
-
De Lyon, T.J.1
Roth, J.A.2
Wu, O.K.3
Johnson, S.M.4
Cockrum, C.A.5
-
21
-
-
0028336250
-
Identification of the volatile decomposition products produced in the deposition of (Hg,Cd)Te by MOVPE
-
J. E. Hails, "Identification of the volatile decomposition products produced in the deposition of (Hg,Cd)Te by MOVPE", Advanced Materials for Optics and Electronics 3, pp 151-161, 1994.
-
(1994)
Advanced Materials for Optics and Electronics
, vol.3
, pp. 151-161
-
-
Hails, J.E.1
-
22
-
-
0742326452
-
A new MOVPE technique for the growth of highly uniform CMT
-
J. Tunnicliffe, S. J. C. Irvine, O. D. Dosser, and J. B. Mullin, "A new MOVPE technique for the growth of highly uniform CMT", J. Crystal Growth 68, pp 245-253, 1984.
-
(1984)
J. Crystal Growth
, vol.68
, pp. 245-253
-
-
Tunnicliffe, J.1
Irvine, S.J.C.2
Dosser, O.D.3
Mullin, J.B.4
-
23
-
-
0034291286
-
Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT
-
C.D. Maxey, M.U. Ahmed, P. Capper, C.L. Jones, N.T. Gordon and A.M. White, "Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT", J. Materials Science-Materials in Electronics 11(7) pp 565-568, 2000.
-
(2000)
J. Materials Science-materials in Electronics
, vol.11
, Issue.7
, pp. 565-568
-
-
Maxey, C.D.1
Ahmed, M.U.2
Capper, P.3
Jones, C.L.4
Gordon, N.T.5
White, A.M.6
-
24
-
-
0037080501
-
Suppression of radiatively-generated currents in infrared detectors
-
N.T. Gordon, C.D. Maxey, C.L. Jones, R. Catchpole and L. Hipwood,."Suppression of Radiatively-Generated Currents in Infrared Detectors", J. Appl. Phys. 91(2), pp 565-568, 2002.
-
(2002)
J. Appl. Phys.
, vol.91
, Issue.2
, pp. 565-568
-
-
Gordon, N.T.1
Maxey, C.D.2
Jones, C.L.3
Catchpole, R.4
Hipwood, L.5
-
25
-
-
3042797355
-
Study of the pixel-pitch reduction for HgCdTe infrared dual-band detectors
-
J. Baylet, O. Gravand, E. Laffosse, C. Vergnaud, S. Ballerand, B. Aventurier, J.C. Deplanche, P. Ballet, P. Castelein, J.P. Chamonal, A. Million, and G. Destefanis, "Study of the Pixel-Pitch Reduction for HgCdTe Infrared Dual-Band Detectors", J. Electron. Mat. 33(6), pp 690-700, 2004.
-
(2004)
J. Electron. Mat.
, vol.33
, Issue.6
, pp. 690-700
-
-
Baylet, J.1
Gravand, O.2
Laffosse, E.3
Vergnaud, C.4
Ballerand, S.5
Aventurier, B.6
Deplanche, J.C.7
Ballet, P.8
Castelein, P.9
Chamonal, J.P.10
Million, A.11
Destefanis, G.12
|