A new waveform-dependent lifetime model for dynamic NBTI in PMOS transistor

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 35-39

  Tan, Shyue Seng ^a   Chen, T P ^a   Ang, C H ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); PMOS TRANSISTOR; THERMAL OXIDATION; WAVEFORM FREQUENCY;

ANNEALING; DIFFUSION; ELECTRIC FIELDS; GATES (TRANSISTOR); MATHEMATICAL MODELS; MATRIX ALGEBRA; OXIDATION; STRESSES; THRESHOLD VOLTAGE; WAVEFORM ANALYSIS;

MOSFET DEVICES;

EID: 3042518755     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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