A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures

Microelectronics Reliability

Volumn 45, Issue 1, 2005, Pages 175-178

  Miranda, E ^a   Brandala, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b Ecl Sup d'Ing en Genie Elec   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; NETWORKS (CIRCUITS); THICKNESS MEASUREMENT;

CIRCUIT OPERATIONS; SIMULATION TOOLS; TRANSISTOR EFFECTS; ULTRA-THIN OXIDES;

MOS DEVICES;

EID: 10044242248     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.08.003     Document Type: Article

References (12)

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