Frequency-temperature scaling of the CV characteristics for irradiated Si detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 466, Issue 3, 2001, Pages 456-463

  Campbell, D ^a   Chilingarov, A ^a   Sloan, T ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

CV characteristics; Frequency dependence; Irradiated silicon detectors; Temperature dependence

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; RADIATION EFFECTS; SILICON SENSORS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

FREQUENCY-TEMPERATURE SCALING;

PARTICLE DETECTORS;

EID: 0035845025     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00261-3     Document Type: Article

References (15)

1. Dependence of depletion voltage and capacitance on temperature and frequency in heavily irradiated silicon diodes