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Volumn 492, Issue 3, 2002, Pages 402-410

Frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors

Author keywords

Depletion voltage; Frequency dependence; Irradiated silicon detectors; Temperature dependence

Indexed keywords

ELECTRIC POTENTIAL; FREQUENCIES; IRRADIATION; PERMITTIVITY;

EID: 0037152355     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(02)01353-0     Document Type: Article
Times cited : (24)

References (11)
  • 1
    • 0003368837 scopus 로고    scopus 로고
    • Dependence of the depletion voltage and capacitance on temperature and frequency in heavily irradiated silicon diodes
    • March. The Note is accessible via ROSE webpage (see Ref. 4[4].)
    • L. Beattie, A. Chilingarov, P. Ratoff, T. Sloan, Dependence of the depletion voltage and capacitance on temperature and frequency in heavily irradiated silicon diodes, ROSE Technical Note 97/4, March 1997. (The Note is accessible via ROSE webpage (see Ref. 4[4].).
    • (1997) ROSE Technical Note , vol.97 , Issue.4
    • Beattie, L.1    Chilingarov, A.2    Ratoff, P.3    Sloan, T.4
  • 5
    • 0010844146 scopus 로고    scopus 로고
    • Study of the frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors
    • February. The Note is accessible via ROSE webpage (see Ref.4[4].)
    • D. Campbell, A. Chilingarov, T. Sloan, Study of the frequency and temperature dependence of the depletion voltage from CV measurements for irradiated Si detectors, ROSE Technical Note /TN/2002-02, February 2002. (The Note is accessible via ROSE webpage (see Ref.4[4].).
    • (2002) ROSE Technical Note /TN/2002-02
    • Campbell, D.1    Chilingarov, A.2    Sloan, T.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.