Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes

Solid-State Electronics

Volumn 42, Issue 11, 1998, Pages 2093-2096

  Borchi, E ^a   Bruzzi, M ^a   Pirollo, S ^a   Sciortino, S ^a  

^a Dipto di Energetica di Firenze   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; NEUTRON IRRADIATION; SEMICONDUCTING SILICON; THERMAL EFFECTS;

FREQUENCY DEPENDENCE; RADIATION-INDUCED DEFECTS;

SEMICONDUCTOR DIODES;

EID: 0032206883     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00186-5     Document Type: Article

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